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| BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor FEATURES Power dissipation.(PC=200mW) Excellent HFE Linearity. Complements the 2SC4081. Production specification 2SA1576AW Pb Lead-free APPLICATIONS General purpose application. ORDERING INFORMATION Type No. 2SA1576AW Marking FQ/FR/FS SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Value -60 Units V Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous -50 -6 -150 V V mA Collector Dissipation Junction and Storage Temperature 200 -55~150 mW Document number: BL/SSSTF029 Rev.A www.galaxycn.com 1 BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor Production specification 2SA1576AW ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions IC=-50A,IE=0 IC=-1mA,IB=0 IE=-50A,IC=0 VCB=-60V,IE=0 VEB=-6V,IC=0 VCE=-6V,IC=-1mA IC=-50mA, IB=-5mA VCE=-12V, IC= -2mA f=30MHz VCB=-12V,IE=0,f=1MHz 140 4 5 120 MIN -60 -50 -6 -0.1 -0.1 560 -0.5 V MHz pF TYP MAX UNIT V V V A A CLASSIFICANTION OF hFE Rank Range marking Q 120-270 FQ R 180-390 FR S 270-560 FS Document number: BL/SSSTF029 Rev.A www.galaxycn.com 2 BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package Production specification 2SA1576AW SOT-323 SOT-323 Dim A B C D E G H J K Min 1.8 1.15 0.15 0.25 1.2 0.02 2.1 Max 2.2 1.35 0.35 0.40 1.4 0.1 2.3 1.0Typical 0.1Typical All Dimensions in mm PACKAGE INFORMATION Device 2SA1576AW Package SOT-323 Shipping 3000/Tape&Reel Document number: BL/SSSTF029 Rev.A www.galaxycn.com 3 |
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